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Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials
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![Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials](https://pubs.acs.org/cms/10.1021/acsaelm.8b00071/asset/images/medium/el-2018-00071w_0005.gif)